breakdown diode
英 [ˈbreɪkdaʊn ˈdaɪəʊd]
美 [ˈbreɪkdaʊn ˈdaɪoʊd]
网络 击穿二极管; 崩溃二极体
双语例句
- A Novel Overvoltage Protection Approach Using Thyristor Valve Triggered by Breakdown Diode for Overcurrent Test Equipment
采用击穿二极管触发晶闸管阀的过电流试验装置的新型过电压保护方式 - Study of breakdown mechanism of the silicon rectifier diode
硅整流管击穿机理的研究 - The physical mechanism of delayed breakdown diode ( DBD) was analyzed.
分析了延迟击穿二极管（DBD，delayedbreakdowndiode）的物理机理。 - In this paper, we studied the breakdown characterists of P+ N diode with field ring and field plate experimentally and presented the curve revealing relationship among optimal spacing between field ring and main junction, substrate density and junction depths.
本文从实验的角度研究了具有场板和场限制环的P+N二极管的击穿特性，给出了场环至主结的最佳间距与衬底浓度和结深的关系曲线。 - The study of avalanche breakdown voltage for hyperabrupt varactor diode
超突变结构变容二极管雪崩击穿电压的研究 - The simulation study of the tunneling effect in the breakdown of 4H-SiC pn junction diode
4H-SiCpn结型二极管击穿特性中隧穿效应影响的模拟研究 - A Study of Breakdown Characterists of P~+ N Diode with Field Ring and Field Plate
具有场板和限制环的P~+N二极管击穿特性的研究 - Best parameters for delayed breakdown diode
延迟击穿半导体开关二极管最佳参数确定 - The linear relation between the reverse breakdown voltage and un-doping active region ′ s thickness of PIN light emitting diode ( LED) was analyzed by using the ideal PIN structure ′ s electric field distribution model.
通过利用突变结PIN理想结构电场分布模型，分析了该结构发光二极管（LED）反向击穿电压与非故意掺杂有源区厚度的线性相关性。 - Calculations of I-V characteristics and second breakdown of silicon diode
硅二极管I-V特性及二次击穿计算